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Determination of Hydrogen in Semiconductors and Related Materials by Cold Neutron Prompt Gamma-ray Activation Analysis

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Abstract

An instrument for prompt gamma-ray activation analysis (PGAA) at the NIST Center for Neutron Research has proven useful for the measurement of hydrogen and other elements in a variety of materials. The sample is irradiated by a beam of low energy neutrons. Gamma-rays emitted by atomic nuclei upon neutron capture are measured and elemental concentrations determined by comparison with appropriate standards. The detection limit for hydrogen is < 5 mg/kg in most materials, and 2 mg/kg for hydrogen measured in silicon. The instrument has been used to measure hydrogen mass fractions of < 100 mg/kg in high purity germanium, and < 10 mg/kg in quartz. More recently PGAA has been used to measure hydrogen in 1 µm thick porous thin films on a silicon substrate, and in crystals of silicon carbide and cerium aluminate.

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Acknowledgments

The author would like to thank Dr. Richard Lindstrom for his advice and assistance, and the following people for providing samples for analysis: Dr. Samuel Trevino of the U.S. Army Research Laboratory, the late Dr. Richard Deslattes formerly of the NIST Physics Laboratory, Dr. Barry Bauer of the NIST polymers division, and Dr. Andreas Magerl and Ms. Elena Machkina from the University of Erlangen-Nürnberg. The author would also like to thank the staff of the NIST Center for Neutron Research.

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  1. Analytical Chemistry Division, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA

    Rick L. Paul

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  1. Rick L. Paul
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Paul, R.L. Determination of Hydrogen in Semiconductors and Related Materials by Cold Neutron Prompt Gamma-ray Activation Analysis. MRS Online Proceedings Library 813, 221–225 (2004). https://doi.org/10.1557/PROC-813-H2.2

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  • DOI: https://doi.org/10.1557/PROC-813-H2.2

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