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Simulation and Electron Energy-Loss Spectroscopy of Electron Beam Induced Point Defect Agglomerations in Silicon

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Abstract

Nitrogen doped silicon samples were irradiated with 200 kV electrons in a transmission electron microscope (TEM). The resulting room temperature point defect creation, bonding and segregation were studied by in situ conventional and Z Contrast TEM imaging and electron energy loss spectroscopy (EELS). Energy loss spectra from areas attributed to be rich in vacancies or silicon self-interstitials are found to be significantly different from the bulk in the near-edge structure of their Si-L2,3 edges. The experimental results are compared with ab initio density of states calculations for electronically excited atoms near relaxed point defect structures and plans are outlined to extend this technique to individual point defect characterization.

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Acknowledgments

This work is supported by NREL contract grant: AAT-2-31605-05 and by the Silicon Wafer Engineering and Defect Science I/U CRC program under NSF grant: EEC-9726176.

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Authors and Affiliations

  1. Materials Science and Engineering Department, North Carolina State University, Raleigh, NC, 27695-7916, USA

    Nathan G. Stoddard, Gerd Duscher & George A. Rozgonyi

  2. Condensed Matter Science Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA

    Gerd Duscher

  3. Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, 43210-1178, USA

    Wolfgang Windl

Authors
  1. Nathan G. Stoddard
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  2. Gerd Duscher
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  3. Wolfgang Windl
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  4. George A. Rozgonyi
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Stoddard, N.G., Duscher, G., Windl, W. et al. Simulation and Electron Energy-Loss Spectroscopy of Electron Beam Induced Point Defect Agglomerations in Silicon. MRS Online Proceedings Library 810, 178–183 (2003). https://doi.org/10.1557/PROC-810-C3.9

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  • DOI: https://doi.org/10.1557/PROC-810-C3.9

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