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Bonding and Epitaxial Relationships at High-K Oxide:Si interfaces

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Abstract

The bonding at interfaces of Si(100) with SrTiO3, LaAlO3 and HfO2 are considered using simple electron counting models.

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Authors and Affiliations

  1. Engineering Department, Cambridge University, Cambridge, UK, CB2 1PZ, USA

    J Robertson & P W Peacock

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  1. J Robertson
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  2. P W Peacock
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Correspondence to J Robertson.

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Robertson, J., Peacock, P.W. Bonding and Epitaxial Relationships at High-K Oxide:Si interfaces. MRS Online Proceedings Library 786, 55 (2003). https://doi.org/10.1557/PROC-786-E5.5

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  • DOI: https://doi.org/10.1557/PROC-786-E5.5

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