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Thickness and Strain Effects on RF/Microwave Properties of BST Thin Films on NdGaO3 Substrates

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Abstract

Ba0.60Sr0.40TiO3 thin films were deposited on <100> oriented NdGaO3 substrates by pulsed-laser deposition. Film thickness ranged from 20 nm to 800 nm. Microstructural features, as evaluated with AFM and FESEM, have exhibited high quality thickness dependent topography. X-ray analyses have shown consistently <110> textured films of high crystallinity. Permittivity, Q-factor, and tunability, were investigated using interdigitated capacitors in the 0.1–20 GHz range. Effect of film thickness on dielectric properties and tunability in polycrystalline <110> textured films exhibited strong thickness dependence in their elasto-dielectric properties. Tunability up to 45% was observed at moderate field levels (∼ 7 MV/m), while the Q-factors remained ≤40.

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Authors and Affiliations

  1. Ceramic and Materials Engineering, Rutgers University, 08854, Piscataway, New Jersey, USA

    William Kurt Simon, E. Koray Akdogan & Ahmad Safari

  2. Navy Research Laboratory, 20375, Washington D.C., District of Columbia, USA

    Jeffery Bellotti

Authors
  1. William Kurt Simon
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  2. E. Koray Akdogan
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  3. Jeffery Bellotti
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  4. Ahmad Safari
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Simon, W.K., Koray Akdogan, E., Bellotti, J. et al. Thickness and Strain Effects on RF/Microwave Properties of BST Thin Films on NdGaO3 Substrates. MRS Online Proceedings Library 784, 59 (2003). https://doi.org/10.1557/PROC-784-C5.9

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  • DOI: https://doi.org/10.1557/PROC-784-C5.9

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