Abstract
Ba0.60Sr0.40TiO3 thin films were deposited on <100> oriented NdGaO3 substrates by pulsed-laser deposition. Film thickness ranged from 20 nm to 800 nm. Microstructural features, as evaluated with AFM and FESEM, have exhibited high quality thickness dependent topography. X-ray analyses have shown consistently <110> textured films of high crystallinity. Permittivity, Q-factor, and tunability, were investigated using interdigitated capacitors in the 0.1–20 GHz range. Effect of film thickness on dielectric properties and tunability in polycrystalline <110> textured films exhibited strong thickness dependence in their elasto-dielectric properties. Tunability up to 45% was observed at moderate field levels (∼ 7 MV/m), while the Q-factors remained ≤40.
Similar content being viewed by others
References
W. Chang, C. M. Gilmore, W. J. Kim, J. M. Pond, S. W. Kirchoefer, S. B. Qadri, D. B. Chrisey, and J. S. Horwitz, J. Appl. Phys., 87, 3044 (2000).
W. J. Kim, W. Chang, S. B. Quadri, J. M. Pond, S. W. Kirchoefer, D. B. Chrisey, and J. S. Horwitz, Appl. Phys. Lett., 76, 1185 (2000).
W. J. Kim, H. D. Wu, W. Chang, S. B. Quadri, J. M. Pond, S. W. Kirchoefer, D. B. Chrisey, and J. S. Horwitz, J. Appl. Phys., 88, 5448 (2000).
W. Chang, S. W. Kirchoefer, J. M. Pond, J. S. Horowitz, and L. Sengupta, J. Appl. Phys., 92, 1528 (2002).
T. M. Shaw, Z. Suo, M. Huang, E. Liniger, R. B. Laibowitz, and J. D. Baniecki, Appl. Phys. Lett., 75, 2129 (1999).
G. G. Stoney, Proc. R. Soc. London, Ser. A 82, 172 (1909).
S. S. Gevorgian, P. L. J. Linner, and E. L. Kolberg, IEEE Trans. Microwave Theory Tech., 44, 896 (1996).
J. Bellotti, Ph.D. Thesis, Rutgers Univeristy (2003).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Simon, W.K., Koray Akdogan, E., Bellotti, J. et al. Thickness and Strain Effects on RF/Microwave Properties of BST Thin Films on NdGaO3 Substrates. MRS Online Proceedings Library 784, 59 (2003). https://doi.org/10.1557/PROC-784-C5.9
Published:
DOI: https://doi.org/10.1557/PROC-784-C5.9