Abstract
Thermal expansion is an important parameter for the design and manufacturing of dimensionally thermally stable opto-electronic integrated circuits and superlattices. In earlier work1, 2 we established the quantitative relationships between phonon frequencies and thermal expansion for Group IV semiconductors. In this paper we extend this approach to the III-V compounds GaAs, GaP, InP, GaSb, InAs, AlSb and InSb.
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Reeber, R.R. Phonon Frequencies and Thermal Expansion of III-V Compounds. MRS Online Proceedings Library 744, 19 (2002). https://doi.org/10.1557/PROC-744-M1.9
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DOI: https://doi.org/10.1557/PROC-744-M1.9