Abstract
The thick films of GaN were investigated using X-ray diffraction, micro-Raman spectroscopy and photoluminescence spectroscopy. The thick films of GaN were prepared on (0001) sapphire using high rate magnetron sputter epitaxy with growth rates as high as 10–60 m/min. The width of the X-ray rocking curve ((0002) reflection) for the sample produced by this method is ∼300 arc-sec. Only the allowed modes were observed in the polarized Raman spectra. The background electron concentration is lower than 3×1016 cm−3, which was determined from the Raman spectra. The phonon lifetime determined from Raman E2(2) mode was 1.6 ps, which is comparable to that of bulk single crystal GaN grown by sublimation (1.4 ps). The full-width-at-half-maximum of the near band-edge photoluminescence peak obtained at 77K is ∼100 meV.
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Park, M., Carlson, E., Chang, Y.C. et al. Optical Characterization of High Quality GaN Produced by High Rate Magnetron Sputter Epitaxy. MRS Online Proceedings Library 743, 412 (2002). https://doi.org/10.1557/PROC-743-L4.12
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DOI: https://doi.org/10.1557/PROC-743-L4.12