Abstract
Characteristics of beam-recrystallized Si-on-insulator (SOT) and Ge-on-insulator (GOI) material systems are compared for the first time to gain complementary understanding of the crystallization mechanism that would benefit both systems. In general, GOI has been found to behave quite differently from SOI. In SOI, Si yields sub-boundaries; in GOI, Ge generates twinned or faceted crystals. In GOI, too, sub-boundary-like features were observed, but only occasionally in the midst of twinned crystals. Also observed in GOI was the phenomenon of seeded crystallization breakdown, where defect-free crystals from the seed abruptly turn into defect-laced crystals at a certain distance from the seed. This phenomenon is highly characteristic in SOI, but has never been reported for GOI. These findings are compared and discussed in light of the traditional understanding of crystal growth.
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See, for example, Materials Research Society Symposia Proceedings (published by North Holland), Vols. 1, 4, 13, 35 (1981, 1982, 1983, 1984, respectively), SOI sections.
Y. Ohmachi, T. Nishioka and Y. Shinoda, J. Appl. Phys. 54, 5466 (1983).
Y. Shinoda, T. Nishioka and Y. Ohmachi, Jpn. J. Appl. Phys. 22, L450 (1983).
The 2nd International Workshop on Future Electron Devices: SOI Technology and 3-D Integration, Shuzenji, Japan, March 19–21, 1985.
E. H. Lee, in 2nd International Conference on VLSI Science and Technology/1984, edited by K. E. Bean and G. A. Rozgonyi (The Electrochemical Society, 1984), Vol. 84–7, pp. 250–266.
E. H. Lee, M. A. Awal, G. K. Celler, L. Pfeiffer, K. West, and T. T. Sheng, Proceedings of the Northeast Regional Meeting of the Metallurgical Society and The Materials Research Society, AT&T Bell Laboratories, Murray Hill, New Jersey, May 1–2, 1986.
E. H. Lee and G. A. Rozgonyi, J. Cryst. Growth. 70, 223 (1984).
E. H. Lee, Mater. Res. Soc. Proc. 35, 563 (1984).
G. F. Boiling and W. A. Tiller, in Metallurgy of Elemental and Compound Semiconductors, edited by R. O. Grubel (Interscience, New York, 1961) p.97.
E. H. Lee, J. Appl. Phys. 59, 263 (1986).
W. A. Tiller, K. A. Jackson, J. W. Rutter, and B. Chalmers, Acta Metallurgica, 1, 428 (1953).
L. Pfeiffer, K. W. West, S. Paine, and D. C. Joy, Mater. Res. Soc. Proc. 35, 583 (1984).
M. W. Geis, H. I. Smith, B. Y. Tsaur, J. C.C. Fan, D. J. Silversmith and R. W. Mountain, J. Electrochem. Soc. 129, 2812 (1982).
E. H. Lee, Materials Letters, 3, 73 (1985).
See, for example, (a) D. P. Woodruff, The Solid-Liquid Interface, Cambridge University Press, (1983) p.84; (b) R. A. Laudise, The Growth of Single Crystals, Prentice Hall (1970) pp. 104–9, 216–7; (c) B. Chalmers, Principles of Solidification, John Wiley and Sons (1964) pp. 150–168; (d) J. C. Brice, The Growth of Crystals from the Melt, North-Holland (1965) p.58.
D. Bensahel and G. Auvert, Mater. Res. Soc. Symp. Proc, 13, 165 (1983).
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Lee, EH., Awal, M.A. Characteristic Comparison Between Ge-on-Insulator (GOI) and SI-on-Insulator (SOI) Beam-Induced Crystallization Mechanism. MRS Online Proceedings Library 74, 577 (1986). https://doi.org/10.1557/PROC-74-577
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DOI: https://doi.org/10.1557/PROC-74-577