Effects of Amorphous Carbon Films on the Performance of Porous Silicon Electroluminescence

Abstract

Efficient electroluminescence (EL) is obtained at low operating voltages (<3 V) from n⁺-type silicon- electrochemically oxidized thin nanocrystalline porous silicon (PS)-amorphous carbon-Indium tin oxide (ITO) junctions. The effects of a few nanometer thick amorphous carbon film between PS and ITO on the EL characteristics have been investigated. The carbon film enhances the stability. The EL efficiency is improved due to a reduction of current density and an increase in EL intensity. In addition, the reproducibility from device to device is very much improved by the carbon film. The enhancement in stability should originate from the capping of PS by the carbon film and the high chemical stability of carbon and Si-C bonds, which should prevent PS oxidation. The carbon film acts as an efficient buffer layer between PS and ITO, resulting in enhanced mechanical, electrical and chemical stability of the top contact and providing high reproducibility. The thin carbon film has only positive effects on all the EL characteristics. This is a very important step towards application.