Abstract
CO2 laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone.
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N. Fukuda, S. Ogawa, K. Abe, Y. Ohashi and S. Kobayashi, Proc. International PVSEC-1 Kobe (1984) 107.
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Fukuda, N., Miyachi, K., Tanaka, H. et al. Control of a-Si:H Film Properties by Phoyo-Assisted Plasma CVD. MRS Online Proceedings Library 70, 25–30 (1986). https://doi.org/10.1557/PROC-70-25
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DOI: https://doi.org/10.1557/PROC-70-25