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Analysis and Comparison of EL2 Concentration and Stress Distribution in Undoped LEC-Grown Semi-Insulating GaAs Ingots

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Abstract

Near-IR absorption mapping has been used for polished GaAs wafers (0.5 mm thick) cut at intervals along the seed-to-tail length of (100)-oriented LEC-grown semi-insulating (SI) ingots. Some 2000 points are measured, point by point, over a wafer’s area, usually near 1.0 µm for EL2 mapping, and near 1.4 µm for observation of stress interferograms. For the results presented here (high pressure LEC crystals from a major commercial supplier), stress maps display the fourfold symmetry predicted in thermoelastic models. The EL2 maps do not necessarily display the same symmetry, especially for wafers from near the tail end of an ingot.

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Authors and Affiliations

  1. Oregon Graduate Center, Beaverton, Oregon, 97006-1999, USA

    P. Dobrilla & J. S. Blakemore

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  1. P. Dobrilla
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  2. J. S. Blakemore
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Dobrilla, P., Blakemore, J.S. Analysis and Comparison of EL2 Concentration and Stress Distribution in Undoped LEC-Grown Semi-Insulating GaAs Ingots. MRS Online Proceedings Library 69, 213–217 (1986). https://doi.org/10.1557/PROC-69-213

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  • DOI: https://doi.org/10.1557/PROC-69-213

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