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Comparison of Conductance and Capacitance techniques for Measurement of Interface States in Thin Oxides

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Abstract

Current trends in integrated circuit processing project gate insulators with oxide equivalent thicknesses of 1.5 to 1.0 nm. Gate oxides in this thickness range have oxide capacitances of 1 to 5 μF/cm2. When oxide capacitances are this large, traditional high-frequency capacitance-voltage techniques for measuring interface states can be inaccurate. We show that a combination of high and low frequency capacitance-voltage data, along with frequency dependent conductance methods, produce more accurate results.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Minnesota, 200 Union St. S.E., Minneapolis, Minnesota, 55455, USA

    T. K. Higman

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  1. T. K. Higman
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Higman, T.K. Comparison of Conductance and Capacitance techniques for Measurement of Interface States in Thin Oxides. MRS Online Proceedings Library 670, 49 (2001). https://doi.org/10.1557/PROC-670-K4.9

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  • DOI: https://doi.org/10.1557/PROC-670-K4.9

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