Abstract
Pulsed laser direct deposit Ni2Si Ohmic contacts were successfully fabricated on n-SiC. The electrical, structural, compositional, and surface morphological properties were investigated as a function of heat treatments ranging from 700 °C to 950 °C. The as-deposited and 700 °C annealed samples were non-Ohmic. Annealing at 950 C° yielded excellent Ohmic behavior, an abrupt void free interface, and a smooth surface morphology. No residual carbon was present within the contact film or at the film-SiC interface and the contact showed no appreciable contact expansion as a result of the 950 °C annealing process. Results of this investigation demonstrate that 950 °C annealed pulse laser deposited Ni2Si-SiC contacts possess excellent electrical, interfacial, microstructural, and surface properties, which are required for reliable device operation.
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Cole, M.W., Joshi, P.C., Hubbard, C.W. et al. A Novel Direct Pulse Laser Deposited Nickel Silicide Ohmic Contact to n-SiC. MRS Online Proceedings Library 640, 76 (2000). https://doi.org/10.1557/PROC-640-H7.6
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DOI: https://doi.org/10.1557/PROC-640-H7.6