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Characterization of Ion Implanted GaN

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Abstract

Low temperature photoluminescence is used to study the levels introduced by low-dose implantation of Mg, C, and Be into GaN, together with Ne, Al, P, or Ar co-implantation species. None of the co-implants successfully creates shallow C or Be acceptors. The yellow (2.2 eV) PL band is strongly introduced by both C and Be implants, but not by Ar, Al, P, or Mg. We propose that it involves Ga vacancies stabilized by complexing with C and Be interstitial (or CGa) donors, which explains why C and Be are absent as substitutional acceptors. We observe excitons bound to isoelectronic PN in P-implanted GaN. They are absent in P+Mg implanted GaN, in which we observe new donor-to-acceptor pair peaks due to two deeper donor levels. We assign these levels to PGa antisite double donors, which are stable inp-type material

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Authors and Affiliations

  1. Implant Sciences Corp., Wakefield, MA, 01880, USA

    L. Krasnobaev

  2. Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA

    D. B. Poker

  3. Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287-5706, USA

    B. J. Skromme & G. L. Martinez

Authors
  1. B. J. Skromme
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  2. G. L. Martinez
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  3. L. Krasnobaev
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  4. D. B. Poker
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Skromme, B.J., Martinez, G.L., Krasnobaev, L. et al. Characterization of Ion Implanted GaN. MRS Online Proceedings Library 639, 1139 (2000). https://doi.org/10.1557/PROC-639-G11.39

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  • DOI: https://doi.org/10.1557/PROC-639-G11.39

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