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Effect of Copper-Induced Recrystallization on the Piezoresistivity of Germanium Films

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Abstract

Effect of copper-induced recrystallization on the piezoresistivity of germanium films is reported. SEM and XRD are used to study the crystalline structure of the films, while RBS, PIXE, and EDX are utilized to investigate their composition. Significant grain growth is observed in Ge films, upon annealing a Cu/Ge bilayer at 400°C for 30 minutes. Also a dominant orientation of Ge(111) is observable when amorphous precursor films are used. Hall measurements and cantilever beam bending show a considerable increase in hole mobility and longitudinal gauge factor, respectively

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Authors and Affiliations

  1. ECE Deparmment, University of Tehran, Tehran, 14399, Iran

    A. Khakifirooz, S. S. Mohajerzadeh, S. Haji & E. Asl Soleimani

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  1. A. Khakifirooz
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  2. S. S. Mohajerzadeh
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  3. S. Haji
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  4. E. Asl Soleimani
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Correspondence to A. Khakifirooz.

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Khakifirooz, A., Mohajerzadeh, S.S., Haji, S. et al. Effect of Copper-Induced Recrystallization on the Piezoresistivity of Germanium Films. MRS Online Proceedings Library 618, 255 (2000). https://doi.org/10.1557/PROC-618-255

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  • DOI: https://doi.org/10.1557/PROC-618-255

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