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A Percolative Approach to Electromigration Modelling

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Abstract

We present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network. The main features of experiments including Black’s law and the log-normal distribution of the times to failure are well reproduced together with compositional effects showing up in early stage measurements made on Al-0.5%Cu and Al-1%Si lines.

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Authors and Affiliations

  1. Dept. of Innovation Engineering, Lecce University, Lecce, Italy

    C. Pennetta & L. Reggiani

  2. National Institute for Material Science, INFM, Italy

    C. Pennetta, L. Reggiani & Gy. Trefán

  3. Dept. of Engineering Sciences, Modena University, Modena, Italy

    F. Fantini

  4. Dept. of Electronic and Information Engineering, Perugia University, Perugia, Italy

    A. Scorzoni

  5. Parma University, dCentro MTI, Parma, Italy

    I. DeMunari

Authors
  1. C. Pennetta
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  2. L. Reggiani
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  3. Gy. Trefán
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  4. F. Fantini
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  5. A. Scorzoni
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  6. I. DeMunari
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Pennetta, C., Reggiani, L., Trefán, G. et al. A Percolative Approach to Electromigration Modelling. MRS Online Proceedings Library 612, 271 (2000). https://doi.org/10.1557/PROC-612-D2.7.1

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  • DOI: https://doi.org/10.1557/PROC-612-D2.7.1

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