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Modeling of Beta Conductivity in Tritiated Amorphous Silicon

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Abstract

The change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed to account for the decrease. The radioactive decay of tritium into helium prod]ces energetic beta particles. Each β particle creates over 1500 electron-hole pairs in the film thereby increasing the conductivity of the film. The 3He atoms diffuse away leaving dangling bonds behind. We find that neutral dangling bonds (D0) are responsible for the decrease in conductivity by acting as recombination centers in the material.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada

    Stefan Costea, Franco Gaspari, Tome Kosteski & Stefan Zukotynski

  2. Ontario Power Technologies, Toronto, Ontario, M8Z 5S4, Canada

    Nazir P. Kherani & Walter T. Shmayda

Authors
  1. Stefan Costea
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  2. Franco Gaspari
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  3. Tome Kosteski
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  4. Stefan Zukotynski
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  5. Nazir P. Kherani
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  6. Walter T. Shmayda
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Costea, S., Gaspari, F., Kosteski, T. et al. Modeling of Beta Conductivity in Tritiated Amorphous Silicon. MRS Online Proceedings Library 609, 274 (1999). https://doi.org/10.1557/PROC-609-A27.4

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  • DOI: https://doi.org/10.1557/PROC-609-A27.4

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