Abstract
The effect of small coverages of Cu evaporated in ultra-high vacuum (UHV) on Al2O3 (0001) surfaces has been investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). These surfaces were cleaned either by annealing at 1000°C in O2 or by Ar sputtering. They differ both in their initial state and their interaction with Cu. The XPS spectra from as-deposited Cu on sputtered samples exhibit small shifts in the energy location of the various peaks as compared to those from a Cu standard. Annealing the Cu/sputtered Al2O3 structure at 500°C produces a shoulder on the Cu 3d peak as well as a new Cu (L3 M4.5 M4.5) Auger feature. Neither of these effects are observed after similar treatment of the Cu/annealed Al2O3 structure. An influence of this different bonding situation on the Cu-sapphire interfacial energy is observed.
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Schrott, A.G., Thompson, R.D. & Tu, K.N. Interaction of Copper with Single Crystal Sapphire. MRS Online Proceedings Library 60, 331–336 (1985). https://doi.org/10.1557/PROC-60-331
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DOI: https://doi.org/10.1557/PROC-60-331