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Nucleation & Growth of Octahedral Oxide Particles in Silicon: Oxygen Ion Implantation

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Abstract

Czochralski silicon was implanted with oxygen at 0.4 and 3.5MeV to obtain concentrations near 1020 oxygen/cm3 in the implanted region. Following implantation the wafers were aged at about 1000°C for 7 hours, and the resulting precipitates were examined by HREM. A high density of octahedral SiOx precipitates (∼1015/cm3) was the dominant morphology. Plate type precipitates and dislocations were also present at lower density. The data indicate octahedra grow from the plates.

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Author notes

  1. G. Vanderschaeve

    Present address: Laboratory for Structure & Properties of the Solid State, Universite des Sciences et Techniques de Lille, Villeneuve d’Ascq, 59655, France

Authors and Affiliations

  1. Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA

    R. W. Carpenter & G. Vanderschaeve

  2. Motorola Semiconductor Research and Development Laboratories, Phoenix, AZ, 85008, USA

    C. J. Varkera & S. R. Wilson

Authors
  1. R. W. Carpenter
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  2. G. Vanderschaeve
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  3. C. J. Varkera
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  4. S. R. Wilson
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Carpenter, R.W., Vanderschaeve, G., Varkera, C.J. et al. Nucleation & Growth of Octahedral Oxide Particles in Silicon: Oxygen Ion Implantation. MRS Online Proceedings Library 59, 309–315 (1985). https://doi.org/10.1557/PROC-59-309

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  • DOI: https://doi.org/10.1557/PROC-59-309

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