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Selective Aluminum CVD on Si(100) From DMAH

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Abstract

The influence of the dose on the crystal growth and on the selectivity of the Al-CVD process has been studied. Doses were varied from 100 L to 18000 L. Selective deposition was observed, both on passivated Si vs. SiO2, as well as on bare Si vs. passivated Si. On oxide elongated crystals have been deposited with dimensions of 1200 × 60 × 60 nm.

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Authors and Affiliations

  1. Dept. of Applied Physics, DIMES, Delft University of Technology, Delft, The Netherlands

    C. Bisch, S. Rogge, T. Mélin & G. C. A. M. Janssen

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  1. C. Bisch
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  2. S. Rogge
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  3. T. Mélin
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  4. G. C. A. M. Janssen
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Correspondence to C. Bisch.

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Bisch, C., Rogge, S., Mélin, T. et al. Selective Aluminum CVD on Si(100) From DMAH. MRS Online Proceedings Library 580, 141–146 (1999). https://doi.org/10.1557/PROC-580-141

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  • DOI: https://doi.org/10.1557/PROC-580-141

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