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Epitaxy of Arsenic-Pressure-Controlled MBE-Grown GaAs Layers

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Abstract

Surface morphologies of the molecular beam epitaxy (MBE)-grown GaAs layers using the background-arsenic-pressure-control method were investigated. The growth parameters, such as substrate temperature, growth rate, epilayer thickness, As/Ga ratio, doping concentration, substrate type, etc., are related to the observed oval defect density. Protrusions and Ga-droplets caused oval defects during growth. The origin of the oval defects in our system is found to be the gallium oxide, not Ga “spitting” from the effusion cell.

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Authors and Affiliations

  1. Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Cheng-Kung University, Tainan, Taiwan, Republic of China

    Y. H. Wang, W. C. Liu, C. Y. Chang, M. S. Jean & S. A. Liao

Authors
  1. Y. H. Wang
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  2. W. C. Liu
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  3. C. Y. Chang
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  4. M. S. Jean
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  5. S. A. Liao
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Wang, Y.H., Liu, W.C., Chang, C.Y. et al. Epitaxy of Arsenic-Pressure-Controlled MBE-Grown GaAs Layers. MRS Online Proceedings Library 56, 49–54 (1985). https://doi.org/10.1557/PROC-56-49

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  • DOI: https://doi.org/10.1557/PROC-56-49

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