Abstract
We propose a novel preparation of high quality silicon nitride (SiNx) films by catalytic chemical vapor deposition (Cat-CVD) method for the application of antireflection coatings. It is found that the refractive index (n) of the Cat-CVD SiNx films are controlled from 2.0 to 2.5 by varying the flow ratio of SiH4 and NH3. The properties of the SiNx (n = 2.0) are investigated, and it is found that, 1) the 16-BHF etching rate of the Cat-CVD SiNx film is only 23 A/min, and the film shows excellent moisture resistance, 2) the Cat-CVD SiNx film shows good insulating properties, and the breakdown electric field is higher than 9 MV/cm and the interface state density is 5.6x1011 cm-2eV-1, 3) the step coverage of the film is very conformal.
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Izumi, A., Matsumura, H. Properties of Catalytic CVD SiNx for Antireflection Coatings. MRS Online Proceedings Library 555, 161–166 (1998). https://doi.org/10.1557/PROC-555-161
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DOI: https://doi.org/10.1557/PROC-555-161