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Simple Electrode-Barrier Structure Using Ir for Integration of PZT-Based High-Density Nonvolatile Memories

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Abstract

We have investigated the electrode-barrier properties of Ir for PZT-based nonvolatile memories. Ir layer was rf-sputtered onto a poly-Si coated Si wafer. PZT thin films were deposited on Ir/poly-Si/SiO2/Si by means of sol-gel spin coating. Highly c-axis oriented perovskite PZT thin films were obtained, which might be due to the interface-controlled growth. We found that Ir in itself acted as an oxygen barrier, which was confirmed from the measurement of P-E hysteresis loops with the electrical contact between top-electrode and bottom-poly-Si. Remanent polarization and coercive field of 1rO2/PZT/Ir/poly-Si capacitor were 20 μC/cm2and 30 kV/cm, respectively and the capacitor showed negligible polarization fatigue up to 1011 switching repetitions. However, the leakage current density at the field of larger than 80 kV/cm was high, which was believed to be related to the unknown phase in PZT caused by the reaction of PbO with bottom-Ir. Such high leakage current behavior could be successively improved by the insertion of vacuum-annealed IrOx buffer layer between PZT/Ir. The electrical properties of IrOx/PZT/annealed-IrO2Ir/poly-Si capacitors are also discussed.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Virginia Tech, Blacksburg, VA, 24061-0237, USA

    S. Tirumala, Y. Song, Sang O. Ryu & Seshu B. Desu

  2. Dept. of Physics, Sangji Univ., Wonju, Kangwondo, 220-702, Korea

    Kwang B. Lee

Authors
  1. Kwang B. Lee
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  2. S. Tirumala
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  3. Y. Song
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  4. Sang O. Ryu
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  5. Seshu B. Desu
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Lee, K.B., Tirumala, S., Song, Y. et al. Simple Electrode-Barrier Structure Using Ir for Integration of PZT-Based High-Density Nonvolatile Memories. MRS Online Proceedings Library 541, 197–202 (1998). https://doi.org/10.1557/PROC-541-197

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  • DOI: https://doi.org/10.1557/PROC-541-197

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