Abstract
This paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm-2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.
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Kase, M., Kikuchi, Y., Niwa, H. et al. Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV. MRS Online Proceedings Library 532, 13–16 (1998). https://doi.org/10.1557/PROC-532-13
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DOI: https://doi.org/10.1557/PROC-532-13