Abstract
To prepare silicon-on-insulator (SOI) films by graphite-strip-heater zone-melting recrystallization (ZMR), a capping technique must be used to insure wetting by the molten Si zone. We have demonstrated two new capping techniques that result in reproducible wetting without degrading the crystallographic texture of the recrystallized film: annealing SiO2-capped Si films in NH3 and depositing two SiNx layers with carefully controlled compositions on the SiO2 capping layer. Wetting 1s promoted by the incorporation of trace amounts of nitrogen at the Si-SiO2 interface. Both N implantation experiments and Auger spectroscopy studies establish that the presence of less than a monolayer of nitrogen at this interface is sufficient to insure wetting.
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References
M. W. Geis, H. I. Smith, B-Y. Tsaur, J. C. C. Fan, D. J. Silversmith, and R. W. Mountain, J. Electrochem. Soc. 129, 2812 (1982).
E. W. Maby, M. W. Geis, Y. L. LeCoz, D. J. Silversmith, R. W. Mountain, and D. A. Antoniadis, Electron Device Lett. EDL-2, 241 (1981).
E. Yablonovitch and T. Gmitter, J. Electrochem. Soc. 131, 2625 (1984).
E. Kuroda, M. Matsuda, and M. Maki, Phys. Status Solidi A 48, 105 (1978).
Acknowledgments
We gratefully acknowledge the expert technical assistance of M. J. Button and M. C. Finn, and fruitful discussions with B. Emerson and J. A. Burns. The Lincoln Laboratory portion of this work was sponsored by the Department of the Air Force, in part under a specific program sponsored by the Rome Air Development Center.
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Chen, C.K., Pfeiffer, L., West, K.W. et al. Capping Techniques for Zone-Melting-Recrystallized Si-On-Insulator Films. MRS Online Proceedings Library 53, 53–58 (1985). https://doi.org/10.1557/PROC-53-53
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DOI: https://doi.org/10.1557/PROC-53-53