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Microstructure and IR Range Optical Properties of Pure DLC and DLC Containing Dopants Prepared by Pulsed Laser Deposition

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Abstract

We have investigated the microstructure and the IR range optical properties(emittance, transmittance and reflectance) of diamond-like carbon (DLC) films with the incorporation of dopants. The DLC films were deposited by pulsed laser deposition with a novel target configuration allowing incorporation of dopants, such as silicon, titanium and copper, into the films. Raman spectroscopy, radial distribution function (RDF) and coordination defect analysis of the electron diffraction pattern of the films showed typical features of DLC with a structure dictated by sp3 bonded carbon, indicating that the overall DLC characteristics did not change upon doping. The IR range optical measurements showed that in addition to the general band-toband transitions, free carriers and phonon contributions, localized states also contribute to the emissivity in DLC and they smooth out the sharp features of the emissivity spectra. The effect of dopants is to enhance the contribution from the free carriers and localized states. The results were discussed on the basis of the effect of dopants on the electronic structure of DLC films.

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References

  1. J. Robertson, Prog. Solid State Chem. 21, 199(1991).

    Article  CAS  Google Scholar 

  2. W. I. Milne, J. Non-cryst. Solids 198–200, 605(1996).

    Article  Google Scholar 

  3. Q. Wei, R. J. Narayan, A. K. Sharma, J. Sankar and J. Narayan, in Covalently Bonded Disordered Thin-Film Materials, eds. By M. Siegal, et al., (Mater. Res. Soc. Proc. 498, PA, 1998).

    Google Scholar 

  4. Q. Wei, J. Narayan, R. J. Narayan, J. Sankar and A. K. Sharma, Mat. Sci. & Eng.(B), 1998, in press.

    Google Scholar 

  5. K. Ebihara, T. Ikegami, T. Matsumoto, H. Nishimoto, S. Maeda and K. Harada, J. Appl. Phys. 66, 4996(1989).

    Article  CAS  Google Scholar 

  6. A. Joshi, S. A. Gangal and S. K. Kulkarni, J. Appl. Phys. 64, 6668(1988).

    Article  CAS  Google Scholar 

  7. N. M. Ravindra, S. Abedrabbo, W. Chen, F. M. Tong, A. K. Nanda and A. C. Speranza, IEEE Trans. Semicond. Manufact. 11, 30(1998).

    Article  Google Scholar 

  8. M. A. Tamor and W. C. Vassell, J. Appl. Phys. 76, 3823(1994).

    Article  CAS  Google Scholar 

  9. D. J. H. Cockayne and D. R. McKenzie, Acta Cryst. A44, 870(1988).

    Article  CAS  Google Scholar 

  10. P. H. Gaskell, A. Saeed, P. Chiux and D. R. McKenzie, Phys. Rev. Lett. 67, 1286(1991).

    Article  CAS  Google Scholar 

  11. F. Li and J. S. Lannin, Phys. Rev. Lett. 65, 1905(1990).

    Article  CAS  Google Scholar 

  12. J. Kakinoki, K. Katada, T. Hanawa and T. Ino, Acta Cryst. 13, 171(1960).

    Article  Google Scholar 

  13. A. F. Myers, M. Q. Ding, S. M. Camphausen, W. B. Choi, J. J. Cuomo and J. J. Hren, the same as in [3].

  14. T. Sato, Jpn. J. Appl. Phys. 6, 339(1967).

    Article  CAS  Google Scholar 

  15. J. Krishnaswamy, A. Rengan, J. Narayan, K. Vedam and C. J. McHaurge, Appl. Phys. Lett. 54, 2455(1989).

    Article  CAS  Google Scholar 

  16. D. L. Pappas, K. L. Saenger, J. Bruley, W. Kratow, J. J. Cuomo, T. Gu and R. Collins, J. Appl. Phys. 71, 5675(1992).

    Article  CAS  Google Scholar 

  17. N. F. Mott and E. A. Davis, Electronic Processes in Non-crystalline Materials, 2nd ed., Clarendon Press, Oxford, 1979.

    Google Scholar 

  18. A. G. Milnes, Deep Impurities in Semiconductors, John Wiley & Sons, 1973.

    Google Scholar 

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Wei, Q., Sharma, A.K., Narayan, R.J. et al. Microstructure and IR Range Optical Properties of Pure DLC and DLC Containing Dopants Prepared by Pulsed Laser Deposition. MRS Online Proceedings Library 526, 331–336 (1998). https://doi.org/10.1557/PROC-526-331

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  • DOI: https://doi.org/10.1557/PROC-526-331

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