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Polycrystalline Sil-x-yGex.Cy for Suppression of Boron Penetration in PMOS Structures

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Abstract

We have fabricated polycrystalline Sil-x-yGexCy by Rapid Thermal Chemical Vapor Deposition and used it as part of a polycrystalline gate structure for PMOS devices. The results showed that the use of carbon in polycrystalline Sil-x-yGexCy suppressed boron penetration across the gate oxide. No effects of gate depletion with the use of poly-Sil-x-yGexCy were observed. Our work suggests that the addition of carbon reduced the chemical potential of boron in Sil-x-yGexCy, which deterred boron from diffusing across the underlying gate oxide.

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Authors and Affiliations

  1. Department of Electrical Engineering, Center for Photonics and Optoelectronic Materials, Princeton University, Princeton, NJ, 08544, USA

    C. L. Chang & J. C. Sturm

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  1. C. L. Chang
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  2. J. C. Sturm
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Correspondence to C. L. Chang.

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Chang, C.L., Sturm, J.C. Polycrystalline Sil-x-yGex.Cy for Suppression of Boron Penetration in PMOS Structures. MRS Online Proceedings Library 525, 213–218 (1998). https://doi.org/10.1557/PROC-525-213

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