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FLB/TEM Observation of Defect Structure Underneath an Indentation in Silicon

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Abstract

Defect structure beneath and near Vickers indentations made with loads of 10, 25 and 50g in Si has been studied in detail by TEM. Both plan-view and cross-sectional observations have been made. Beneath the 10 and 25g indentations an amorphous phase is formed, but beneath the 50g indentation no amorphous phase is formed.

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Authors and Affiliations

  1. Department of Quantum Engineering, Nagoya University, Nagoya, 464-8603, Japan

    A. Shimatani, T. Nango, Suprijadi & H. Saka

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  1. A. Shimatani
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  2. T. Nango, Suprijadi
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  3. H. Saka
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Correspondence to A. Shimatani.

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Shimatani, A., Nango, Suprijadi, T. & Saka, H. FLB/TEM Observation of Defect Structure Underneath an Indentation in Silicon. MRS Online Proceedings Library 522, 71–76 (1998). https://doi.org/10.1557/PROC-522-71

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  • DOI: https://doi.org/10.1557/PROC-522-71

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