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Multi-Step Rapid Thermal Annealing of Si-Implanted GaAs for Microwave Discrete Devices and Monolithic Integrated Circuits Fabrication

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Abstract

In this paper, we report a multi-step rapid thermal annealing process for microwave discrete devices and monolithic integrated circuits fabrication. 2” diameter undoped liquid encapsulated Czochralski GaAs wafers were implanted with 29Si+ and annealed without capping using incoherent light from high intensity halogen lamps. The annealing was carried out in multiple temperature steps to achieve optimum damage removal and dopant activation. As a result, wafers implanted with mid 1012 cm−2 dose exhibited 85–90% activation efficiency for 100kV implant and nearly 100% activation for 300 kV implant. In comparison with single-stepannealed wafers, multi-step-annealed wafers showed not only higher activation efficiency, but also more uniform activation, higher electron mobility and better device performance.

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Authors and Affiliations

  1. Electronics Laboratory, General Electric Company, Syracuse, NY, 13221, USA

    Tan-Hua Yu, W. M. Kong, L. F. Lester, P. M. Smith, K. H. G. Duh & J. C. M. Hwang

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  1. Tan-Hua Yu
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  2. W. M. Kong
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  3. L. F. Lester
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  4. P. M. Smith
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  5. K. H. G. Duh
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  6. J. C. M. Hwang
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Yu, TH., Kong, W.M., Lester, L.F. et al. Multi-Step Rapid Thermal Annealing of Si-Implanted GaAs for Microwave Discrete Devices and Monolithic Integrated Circuits Fabrication. MRS Online Proceedings Library 52, 417–422 (1985). https://doi.org/10.1557/PROC-52-417

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  • DOI: https://doi.org/10.1557/PROC-52-417

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