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Secondary Ion Images of Impurities at Grain Boundaries in Polycrystalline Silicon

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Abstract

A CAMECA IMS-3F secondary ion microscope has been used to investigate the presence of impurities in cast polycrystalline silicon wafers and to determine their lateral distribution. Cesium and oxygen ion bombardment were used to selectively detect potential impurities and extract their lateral distribution with submicron lateral resolution.Images of H, C, O, P, and Cu segregated in grain boundaries have been obtained from polycrystalline silicon.

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Authors and Affiliations

  1. Arco Solar, Inc., 20554 Plummer Street, Chatsworth, California, 91311, USA

    Gary A. Pollock

  2. Charles Evans & Associates, 1670 South Amphlett Boulevard, San Mateo, California, 94402, USA

    V. R. Deline & B. K. Furman

Authors
  1. Gary A. Pollock
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  2. V. R. Deline
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  3. B. K. Furman
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Pollock, G.A., Deline, V.R. & Furman, B.K. Secondary Ion Images of Impurities at Grain Boundaries in Polycrystalline Silicon. MRS Online Proceedings Library 5, 71–76 (1981). https://doi.org/10.1557/PROC-5-71

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  • DOI: https://doi.org/10.1557/PROC-5-71

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