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An Enhanced Photoresponse at Dislocation Subgrain Boundaries Revealed by X-Ray Topography of Polysilicon Solar Cells

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Abstract

An enhanced photoresponse at dislocation subgrain boundaries (in comparison with grain boundaries and dislocation-associated twin boundaries) is attributed to an increased junction depth at their positions relative to the value of the minority carrier diffusion length, Ln. For reasonably pure material, Ln is determined by the dislocation density. The dislocation microstructure of polysilicon solar cells is advantageously studied by means of the several x-ray topography techniques.

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Authors and Affiliations

  1. Solarex Corporation, Rockville, MD, 20850, USA

    S. M. Johnson & G. M. Storti

  2. University of Maryland, College Park, MD, 20742, USA

    R. W. Armstrong, R. G. Rosemeier & H. C. Lin

  3. Semix, Incorporated, Gaithersburg, MD, 20760, USA

    W. F. Regnault

Authors
  1. S. M. Johnson
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  2. R. W. Armstrong
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  3. R. G. Rosemeier
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  4. G. M. Storti
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  5. H. C. Lin
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  6. W. F. Regnault
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†

Work supported by Semix, Incorporated under DOE Cooperative Agreement No. DE-FC01-80ET 23197.

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Johnson, S.M., Armstrong, R.W., Rosemeier, R.G. et al. An Enhanced Photoresponse at Dislocation Subgrain Boundaries Revealed by X-Ray Topography of Polysilicon Solar Cells. MRS Online Proceedings Library 5, 179–184 (1981). https://doi.org/10.1557/PROC-5-179

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  • DOI: https://doi.org/10.1557/PROC-5-179

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