Abstract
An innovative fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding has been demonstrated. Ferroelectric thin films of Bi4Ti3O12 (BiT) and Pb(Zr,Ti)O3 (PZT) were deposited on 3” Si wafers using chemical solution deposition (CSD) and subsequently crystallized by conventional and rapid thermal annealing. The films were then polished in order to reach a roughness and waviness suitable for bonding. They were then directly bonded to silicon wafers in a micro-cleanroom and annealed in air at temperatures ranging from 200°C to 500°C. Bonding energies up to 1.5 J/m2 have been achieved which is almost high enough to consider the two bonded wafers as a single body. Metal-Ferroelectric-Silicon (MFS) structures containing the ferroelectric-Si bonded interface were accomplished by polishing down and etching the handling wafer. The MFS structures were electrically characterized by capacitance-voltage (C-V) and charge-voltage (Q-V) measurements.
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Acknowledgement
We thank Dr. N.D. Zakharov for the HREM micrographs. One of us (J.F.S.) appreciated support by a Senior Scientist Award by Humboldt Foundation.
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Alexe, M., Senz, S., Pignolet, A. et al. Direct Wafer Bonding and Layer Transfer: An Innovative way for the Integration of Ferroelectric Oxides into Silicon Technology. MRS Online Proceedings Library 493, 517–522 (1997). https://doi.org/10.1557/PROC-493-517
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DOI: https://doi.org/10.1557/PROC-493-517