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Large Area PbZr1-xTixO3 (PZT) Thin Films Deposited by MOCVD Processes

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Abstract

An advanced oxide MOCVD tool and processes have been developed to deposit large area PbZr1-xTixO3 (PZT) thin films on 6” Si and Pt/Ti/SiO2/Si substrates. The experimental results show the advanced oxide MOCVD tool can achieve the growth of PZT thin films with thickness uniformity of 2% and composition uniformity better that 3% on both 6” Si and Pt/Ti/SiO,/Si wafers at high deposition rates. X-ray patterns showed a single PZT perovskite phase, and AFM showed homogeneous microstructure and low surface roughness. Typically, 300 nm thick PZT films with a grain size about 0.3 μm have Pr greater than 20 - 30 μC/cm2 at 5V, a dielectric constant around 1000, low coercive field (Ec 50 - 70 kV/cm), and fatigue rate (the normalized polarization is about 0.6 after 1010 cycles at 5 V), and leakage current of 2 - 6xlO-7 A/cm2 at 150 kV/cm and room temperature on Pt electrodes. In addition, the effects of reactor design and process conditions on the thickness and composition uniformity, as well as the m i ero structure and properties were also investigated.

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Authors and Affiliations

  1. EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ, 08873, USA

    Tingkai Li, Elliot Hartford, Pete Zawadzki & Richard A. Stall

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  1. Tingkai Li
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  2. Elliot Hartford
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  3. Pete Zawadzki
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  4. Richard A. Stall
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Correspondence to Tingkai Li.

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Li, T., Hartford, E., Zawadzki, P. et al. Large Area PbZr1-xTixO3 (PZT) Thin Films Deposited by MOCVD Processes. MRS Online Proceedings Library 493, 327–332 (1997). https://doi.org/10.1557/PROC-493-327

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  • DOI: https://doi.org/10.1557/PROC-493-327

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