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Formation of Ultra Smooth Bi-Based Ferroelectric Films and their size effect on Dielectric Constant

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We have formed Bi-based ferroelectric films, such as Bi2WO6, Bi2VO5.5(n=1), Bi2SrTa2O9, Bi3TiNbO9(n=2) and Bi4Ti3O12(n=3) using a pulsed laser deposition technique. Especially, the Bi2VO5.5 film shows an atomically smooth surface with a flat 2000-3000 Å wide terrace and steps of 8 Å and 16 Å which correspond to a half and one unit cell, respectively. The dielectric constant, remanent polarization and coercive field of the Bi2VO5.5 thin films formed on Nb-SrTiO3(100) are 8, 3.0 μ C/cm2 and 16.0 kV/cm, respectively. The Bi2VO5.5 film formed on SiO2/Si(100) shows memory windows of 0.35V against a±2V gate bias during C-V measurements.

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Authors and Affiliations

  1. Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, 567, Japan

    H. Tabata, T. Yanagita & M. Hamada

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  1. H. Tabata
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  2. T. Yanagita
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  3. M. Hamada
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  4. T. Kawai
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Correspondence to H. Tabata.

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Tabata, H., Yanagita, T., Hamada, M. et al. Formation of Ultra Smooth Bi-Based Ferroelectric Films and their size effect on Dielectric Constant. MRS Online Proceedings Library 493, 105–110 (1997). https://doi.org/10.1557/PROC-493-105

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