Abstract
The thermal decomposition of disilane in a hydrogen or helium flow has been used for the deposition of hydrogenated amorphous silicon (a-Si:H) films on the surface of several substrates at 450°–500°C. The concentration of disilane in the reaction mixture has been found to affect strongly the deposition rate and the photoconductivity of a-Si:H films. The AMI conductivity of a-Si:H films increases with increasing disilane concentration and approaches 10−5(ohm-cm)−l at disilane concentrations higher than about 4%, and the conductivity ratio is about 105. The density of gap states in CVD a-Si:H films have been determined by the photothermal deflection spectroscopy, capacitance-temperature, capacitance-frequency, and space-charged-limited current measurements with similar results.
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Supported by the Electric Power Research Institute under contract RP 1193-2
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Chu, T.L., Chu, S.S., Ang, S.T. et al. Hydrogenated Amorphous Silicon Films by the Pyrolysis of Disilane. MRS Online Proceedings Library 49, 21–26 (1985). https://doi.org/10.1557/PROC-49-21
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DOI: https://doi.org/10.1557/PROC-49-21