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ZnxCd1-xTe Epitaxial Growth by Remote Plasma Enhanced MOCVD Method

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Abstract

For epitaxial growth of compound ZnxCd1-XTe by metal organic chemical vapor deposition (MOCVD), it is difficult to obtain a high composition ratio x. In this study, we have adopted a remote plasma enhanced (RPE) MOCVD method for the epitaxial growth. Cd1-xZnxTe with the composition ratio x in the range of 0 to 1 has been obtained while varying the ratio of dimethylcadmium (DMCd) to diethylzinc (DEZn) from 0 to 20%. The crystallinity of the epitaxial films was about 400 to 700 arcsec FWHM defined by X ray diffiraction measurements.

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Acknowledgement

This research is supported in part by the Grant-in-Aid of Scientific Research (A) in Japan Government.

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Authors and Affiliations

  1. Graduate school of Electronic Science and Technology, Shizuoka University, Shizuoka, Japan

    Daiji Noda, Toru Aoki, Yoichiro Nakanishi & Yoshinori Hatanaka

  2. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, 432, Japan

    Yoichiro Nakanishi & Yoshinori Hatanaka

Authors
  1. Daiji Noda
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  2. Toru Aoki
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  3. Yoichiro Nakanishi
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  4. Yoshinori Hatanaka
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Correspondence to Daiji Noda.

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Noda, D., Aoki, T., Nakanishi, Y. et al. ZnxCd1-xTe Epitaxial Growth by Remote Plasma Enhanced MOCVD Method. MRS Online Proceedings Library 487, 45–49 (1997). https://doi.org/10.1557/PROC-487-45

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  • DOI: https://doi.org/10.1557/PROC-487-45

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