Abstract
Nano-crystalline silicon (nc-Si) thin films were directly deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) and ion beam assisted electron beam deposition (IBAED) method. In the sample deposited by ECR-CVD, the room temperature photoluminescence originated from the nc-Si and the silicon-hydrogen bond were appeared. It was confirmed that the size of the nc-Si could be controlled up to about 3 nm with the low substrate temperature during the deposition process and then the hydrogen atoms play a very important role in the formation of the nc-Si. The IBAED method was also found to an useful technique for nc-Si formation by the control of ion beam power.
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This work was supported by the Ministry of Science and Technology of Korea.
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Kim, E.K., Choi, W.C., Min, SK. et al. Formation of Silicon Nanocrystallites by Electron Cyclotron Resonance Chemical Vapor Deposition and Ion Beam Assisted Electron Beam Deposition. MRS Online Proceedings Library 486, 231–236 (1997). https://doi.org/10.1557/PROC-486-231
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DOI: https://doi.org/10.1557/PROC-486-231