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Cross-sectional cathodoluminescence of GaN epitaxial films

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Abstract

Cathodoluminescence (CL) in the scanning electron microscope has been used to investigate the variation along the growth axis direction of luminescence emission from epitaxial GaN films. CL spectra recorded at different positions of the sample cross-section as well as monochromatic CL images show strong spatial variations of the different luminescence emissions along the growth axis. At the buffer layer-substrate interface and at the top part of the sample, which corresponds to a Si doped epilayer, enhanced CL emission is observed as compared with the relatively low emission in the central region of the cross-section. The nature of the defects responsible for the observed CL distribution is discussed.

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Acknowledgments

This work was supported by DGICYT (Projects PB93-1256 and PB96-0639). MHZ thanks AECI and CoNaCyT for a research grant.

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Author notes

  1. M. Herrera Zaldivar

    Present address: Instituto de Física, Β. Universidad Autónoma de Puebla, 72570, Puebla, México

Authors and Affiliations

  1. Departamento de Física de Materiales, Facultad de Físicas, Universidad Complutense, 28040, Madrid, Spain

    M. Herrera Zaldivar, P. Fernández & J. Piqueras

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  1. M. Herrera Zaldivar
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  2. P. Fernández
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  3. J. Piqueras
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Zaldivar, M.H., Fernández, P. & Piqueras, J. Cross-sectional cathodoluminescence of GaN epitaxial films. MRS Online Proceedings Library 482, 726–731 (1997). https://doi.org/10.1557/PROC-482-703

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  • DOI: https://doi.org/10.1557/PROC-482-703

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