Abstract
Crystalline quality of nitrides on sapphire by OMVPE has been investigated. First, in-situ observations of the crystallization process of the low temperature deposited AIN buffer layer or GaN buffer layer on sapphire substrate have been performed. Small hexagonal mesas were formed from the sapphire to the surface and finally they formed a stacked structure. Secondly, a low temperature deposited buffer layer located between the high temperature grown GaN was found to reduce the etch pit density of GaN films. Thirdly, structural properties of Ga1−xInxN (0 ≤x≤0.21, and x= l) on GaN and GaInN/GaN MQWs on GaN have been characterized by Xray diffraction. Coherently grown GaInN showed almost the same twisting as the underlying GaN layer, while free standing InN showed large twisting. Thickness of the well layers in MQWs has been controlled within one monolayer preciseness, and the fluctuation of alloy composition has been controlled to within 2%.
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R. Dingle, K. L. Shaklee, R. F. Leheny and R. B. Zetterstrom, Appl. Phys. Lett., 19, 5 (1971).
I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka and M. Koike, Jpn. J. Appl. Phys., 34, L1517(1995).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys., 35, L74 (1996).
I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike and H. Amano, Electron. Lett., 32, 1105 (1996).
K. Itaya, M. Onomura, J. Nishio, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamoto, H. Fujimoto, H. Kokubun, Y. Ohba, G. Hatakoshi and M. Ishikawa, Jpn. J. Appl. Phys., 35, L1315 (1996).
G. E. Bulman, K. Doverspike, S. T. Sheppard, T. W. Weeks, M. Leonard, H. S. Kong, H. Dieringer, C. Carter and J. Edmond, Device Research Conf., IV-B-8 (1997).
A. Kuramata, K. Domen, R. Soejima, K. Horino, S. Kubota and T. Tanahashi, Jpn. J. Appl. Phys., 36, L1130 (1997).
M. P. Mack, A. Abare, M. Aizcorbe, P. Kozodoy, S. Keller, U. K. Mishra, L. Coldren and S. P. DenBaars, MIJ-NSR Vol.2, Art.41 (1997).
F. Nakamura, T. Kobayashi, T. Asatsuma, K. Funato, K. Yanashima, S. Hashimoto, K. Naganuma, S. Tomioka, T. Miyajima, E. Morita, H. Kawai and M. Ikeda, Proc. Int. Conf. Nitride Semicond., Tokushima, LN-8 (1997).
M. Kneissel, D. Hofstetter, D. P. Bour, R. Donaldson, J. Walker and N. M. Johnson, Presented at Int. Conf. Nitride Semicond., Tokushima, (1997).
N. Yamada, Y. Kaneko, S. Watanabe, Y. Yamaoka, T. Hidaka, S. Nakagawa, E. Marenger, T. Takeuchi, S. Yamaguchi, H. Amano and I. Akasaki, 10th IEEE/Lasers and Electro-Optics Society Annual Meeting, PD1.2 (1997).
S. Nakamura, Abstracts of Mat. Res Soc., Fall Meeting, Boston, Session N, 308.12 (1996).
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Appl. Phys. Lett., 68, 2105 (1996).
H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett., 48, 353 (1986).
I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu and N. Sawaki, J. Crystal Growth, 98, 209 (1989).
K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiraishi and K. Oki, J. Crystal Growth, 115, 628 (1991).
S. Nakamura, T. Mukai and M. Senoh, J. Appl. Phys., 71, 5543 (1992).
S. Keller, D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra and S. P. DenBaars, Jpn. J. Appl. Phys., 35, L285 (1996).
S. D. Lester, F. A. Ponce, M. G. Craford and D. A. Steigerwald, Appl. Phys. Lett., 66, 1249 (1995).
H. Amano, T. Takeuchi, H. Sakai, S. Yamaguchi, C. Wetzel and I. Akasaki, Proc. ICSCIII-N, Stockholm, (1997). (in print)
M. Katsuragawa, S. Ikuta, H. Kato, H. Amano and I. Akasaki, Jpn. J. Appl. Phys., to be submitted.
M. Iwaya, T. Takeuchi, H. Kato, S. Yamaguchi, C. Wetzel, H. Amano and I. Akasaki, Jpn. J. Appl. Phys., to be submitted.
D. Cherns, W. T. Young, J. W. Steeds, F. A. Ponce and S. Nakamura, J. Crystal Growth, 178, 201(1997).
S. Ruvimov, Z. L. Weber, C. Dieker, J. Washburn, M. Koike, H. Amano and I. Akasaki, Mat. Res. Soc. Symp. Proc., 468, 287 (1997).
T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano and I. Akasaki, Jpn. J. Appl. Phys. 36, L177 (1997).
M. Leszczynski, I. Grzegory, H. Teisseyre, T. Suski, M. Bockowski, J. Jun, J. M. Baranowski, S. Polowsky and J. Domagala, J. Crsytal Growth, 169, 235 (1996).
T. Detchprohm, K. Hiramatsu, H. Amano and I. Akasaki, Appl. Phys. Lett., 61, 2688 (1992).
K. Kubota, Y. Kobayashi and K. Fujimoto, J. Appl. Phys., 66, 2984 (1989).
For example, C. Kittel, Introduction to Solid State Physics, 6th Edition, John Wileypublisher-loc/publisher-loc>, 49 (1986).
J. G. Gualtieri, A. Koshinski and A. Ballato, IEEE Trans. Ultrason. Feroelectr. Freq. Control 41, 53 (1994).
A. Bykhovski, B. Gelmont, M. Shur and A. Khan, J. Appl. Phys. 77, 1616 (1995).
A. D. Bykhovski, V. V. Kaminski, M. S. Sur, Q. C. Chen and M. A. Khan, Appl. Phys. Lett. 68, 818 (1996).
G. Martin, A. Botchkarev, A. Rockett and H. Morkoc, Appl. Phys. Lett, 68, 2541 (1996).
D. L. Smith and C. Mailhiot, Phys. Rev. Lett. 58, 1264 (1987).
D. Sun and E. Towe, Jpn. J. Appl. Phys. 33, 702 (1994).
E. A. Cardi, T. Y. Chang, K. W. Goossen and L. F. Eastman, Appl. Phys. Lett. 56, 659 (1990).
R. L. Tober and T. B. Bahder, Appl. Phys. Lett. 63, 2369 (1993).
M. P. Halsall, J. E. Nicholls, J. J. Davies, B. Cockayne and P. J. Wright, J. Appl. Phys. 71, 907 (1992).
T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano and I. Akasaki, Jpn. J. Appl. Phys., 36, L382 (1997).
H. Sakai, T. Takeuchi, S. Sota, M. Katsuragawa, M. Koomori, H. Amano and I. Akasaki, J. Crystal Growth (to be submitted).
Acknowledgments
This work was partly supported by the Ministry of Education, Science, Sports and Culture of Japan, (contract nos. 06452114, 07505015, 07650025 and High-Tech Research Center Project), Japan Society For the Promotion of Science (Research for the Future Program) and DaUco Foundation.
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Amano, H., Takeuchi, T., Yamaguchi, S. et al. Structural Properties of Nitrides Grown by OMVPE on Sapphire Substrate. MRS Online Proceedings Library 482, 523–532 (1997). https://doi.org/10.1557/PROC-482-479
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DOI: https://doi.org/10.1557/PROC-482-479