Abstract
Cu particle growth behavior on two silicon substrates, amorphous and single crystal silicon, has been investigated using two contamination solutions. This study reveals that the growth behavior of Cu particle depends on substrate conditions and copper contamination solutions. Contamination level is independent of split conditions. From the SEM images of an amorphous silicon shows a big difference in the number of particles depending on copper contamination solution. The amorphous silicon has similar native oxide thickness in ultrapure water spiked with CuF2 and CuCl2, whereas the single crystal silicon is different from the native oxide thickness depending on copper contamination solution. When 1 ppm of Cu in ultrapure water was spiked as a function of time, the amount of Cu impurity on amorphous silicon in the early dipping stage was measured 10 times higher than that on single crystal silicon for both of copper contamination solutions.
Similar content being viewed by others
References
W. Kern, J. Electrochem. Soc., 137, p. 1,887 (1994)
Geun-Min CHOI, Katsuyuki SEKINE, Hiroshi MORITA, and Tadahiro OHMI, Extended Abstract of the 1996 International Conference on Solid State Devices and Materials, p.371 (Yokohama, 1996)
M. Hirose, T. Yasaka, M. Hiroshima, M. Takakura and S. Miyazaki, Proc. Mat. Res. Soc. Symp., 259, p. 385 (1992)
H. Morinaga, M. Suyama and T. Ohmi, J. Electrochem. Soc., 141, p. 2,834 (1994)
H. Morinaga, M. Suyama, M. Nose, Steven Verhaverbeke and T. Ohmi, Proc. Insitute of Envirnmental Sciences, p. 332 (1994)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Choi, GM., Sekijne, K., Morita, H. et al. The Effect of Contamination Solutions and Substrate Conditions on Copper Particle Growth Behavior. MRS Online Proceedings Library 477, 275–280 (1997). https://doi.org/10.1557/PROC-477-275
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-477-275