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Thermal Stresses, Interfacial Reactions and Microstructures of Al/Ti and Al/TiN Thin Films Encapsulated by SiOF

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Abstract

Variations in stress and grain size of Ti- and TiN- capped Al thin films passivated by fluorinated silicon dioxide (SiOF) during repetitive thermal cycling are investigated. The amount of stress relaxation, elastic and plastic behavior of these thin film structures are compared. Ti and TiN cap layers strengthen the single Al film significantly while the presence of SiOF induces plastic deformation of metal layers. Less grain growth is associated with a dielectric passivated Al film. The penetration of fluorine into Al upon annealing can be reduced by a TiN barrier layer.

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References

  1. W-T. Tseng, C.-F. Lin, Y-T. Hsieh, M-S. Feng, in Advanced Metallization for Future ULSI edited by K. N. Tu, J. W. Mayer, J. M. Poate, L. J. Chen (Mater. Res. Soc. Proc. 427, Pittsburgh, PA 1996), p. 441–446.

    Google Scholar 

  2. W.-T. Tseng, L.-W. Chen, Y-T. Hsieh, G.-C. Tu, Proc. 1996 Inter. Electron Dev. Mater. Symp. (TEDMS), Cl-3, p. 29 (1996).

    Google Scholar 

  3. G. Stoney, Proc. R. Soc. London A, 82, p. 172 (1909).

    Article  CAS  Google Scholar 

  4. T. Yamaha, M. Naito, J. Electrochem. Soc, 143, p. 3297 (1996).

    Article  CAS  Google Scholar 

  5. S. Bader, E. M. Kalaugher, E. Arzt, Thin Solid Films, 263, p. 175 (1995).

    Article  CAS  Google Scholar 

  6. C. V. Thompson, R. Carel, J. Mech. Phys. Solids, 44, p. 657 (1996).

    Article  CAS  Google Scholar 

  7. B. K. Hwang, J. H. Choi, S. Lee, K. Fujihara, U. I. Chung, S. I. Lee, M. Y. Lee, Jap. J. Appl. Phys., 35, Pt. 1, p. 1588 (1996).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. National Nano Device Laboratories, Hsinchu, 300, Taiwan

    Wei-Tsu Tseng

  2. Institute of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, 300, Taiwan

    Li-Wen Chen & G. -C. Tu

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  1. Wei-Tsu Tseng
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  2. Li-Wen Chen
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  3. G. -C. Tu
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Tseng, WT., Chen, LW. & Tu, G.C. Thermal Stresses, Interfacial Reactions and Microstructures of Al/Ti and Al/TiN Thin Films Encapsulated by SiOF. MRS Online Proceedings Library 476, 267–272 (1997). https://doi.org/10.1557/PROC-476-267

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  • DOI: https://doi.org/10.1557/PROC-476-267

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