Skip to main content
SpringerLink
Log in

Rapid Thermal Annealing and Oxidation of Silicon Wafers with Back-Side Films

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Temperatures for lamp-heated rapid thermal processing of wafers with various back-side films were controlled by a Lucent Technologies pyrometer which uses a/c lamp ripple to compensate for emissivity. Process temperatures for anneals of arsenic and boron implants were inferred from post-anneal sheet resistance, and for rapid thermal oxidation, from oxide thickness. Results imply temperature control accuracy of 12°C to 17°C at 3 standard deviations.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. B. Nguyenphu, M. Oh, and A. T. Fiory, Mat. Res. Soc. Proc. 429, 291 (1996).

    Article  CAS  Google Scholar 

  2. C. Schietinger, B. Adams, and C. Yarling, Mat. Res. Soc. Proc. 224, 23 (1991).

    Article  Google Scholar 

  3. S. Abedrabbo and N.M. Ravindra, private communication.

  4. K. L. Knutson and T. L. Cooper, Mat. Res. Soc. Proc. 429, 31 (1996), and private communication.

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, NJ, 07974, USA

    A. T. Fiory

Authors
  1. A. T. Fiory
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Fiory, A.T. Rapid Thermal Annealing and Oxidation of Silicon Wafers with Back-Side Films. MRS Online Proceedings Library 470, 49–56 (1997). https://doi.org/10.1557/PROC-470-49

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-470-49

Search

Navigation