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Luminescence and TEM-Investigation of Laser Induced Defects in (Al,Ga)As Heterostructures

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Abstract

Laser induced defects in (AI,Ga)As heterostructures have been investigated. Luminescence topography reveals three different defects, a luminescent B, a nonradiative D as well as dark line defects (DLD). Luminescence and excitation spectra together with TEM measurements indicate a point defect or point defect complex for B and D. Defect B is described by a configuration coordinate (CC-) model with low vibrational energies. Defect DLD consists of extended dislocations.

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Authors and Affiliations

  1. Institute of Applied Physics, University of Bern, Sidlerstr. 5, CH-3012, Bern, Switzerland

    B. Zysset

  2. Technical Center, Generaldirektion PTT, Ostermundigenstr. 93, CH-3029, Bern, Switzerland

    R. P. Salathe

  3. Institut de Génie Atomique, Ecole Polytechnique Fédérale de Lausanne, PHB-Ecublens, CH-1015, Lausanne, Switzerland

    J. L. Martin & R. Gotthardt

  4. Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne, PHB-Ecublens, CH-1015, Lausanne, Switzerland

    F. K. Reinhart

Authors
  1. B. Zysset
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  2. R. P. Salathe
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  3. J. L. Martin
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  4. R. Gotthardt
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  5. F. K. Reinhart
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Zysset, B., Salathe, R.P., Martin, J.L. et al. Luminescence and TEM-Investigation of Laser Induced Defects in (Al,Ga)As Heterostructures. MRS Online Proceedings Library 46, 419–424 (1985). https://doi.org/10.1557/PROC-46-419

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  • DOI: https://doi.org/10.1557/PROC-46-419

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