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Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 μM

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Abstract

Silicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0-1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ~1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01-0.1% was found in samples annealed at 900°C in diluted oxygen (~ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.

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Authors and Affiliations

  1. Department of Electrical Engineering, University of Rochester, Rochester, NY, 14627, USA

    L. Tsybeskov

  2. The Institute of Optics, University of Rochester, Rochester, NY, 14627, USA

    K. L. Moore, P. M. Fauchet & D. G. Hall

  3. Also Laboratory for Laser Energetics and Department of Physics and Astronomy, University of Rochester, Rochester, NY, 14627, USA

    P. M. Fauchet

Authors
  1. L. Tsybeskov
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  2. K. L. Moore
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  3. P. M. Fauchet
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  4. D. G. Hall
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Tsybeskov, L., Moore, K.L., Fauchet, P.M. et al. Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 μM. MRS Online Proceedings Library 452, 523–528 (1996). https://doi.org/10.1557/PROC-452-523

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