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Metallic Impurities and Dopant Cross-Contamination Effects in Ion Implanted Surfaces

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Abstract

Contamination of implanted surfaces by metals and dopants is a significant limitation to the use of high-dose implantation for semiconductor IC fabrication. RBS, SIMS, SRP, chemical etching and IC device parameter measurements have been used to characterize contaminated surfaces implanted with modern, production-type implanters. Levels of dopant cross-contamination of the order of 10% of the primary dose have been observed. A systematic study of the effects of As, P, B and Sb implanted Si has shown measurable effects on diffusion profiles and junction depths at contamination levels as low as 0.01% of the primary dose. These effects are particularly serious for fast-diffusing contaminants in slow-diffusing primary dopants (such as P contamination in As implants). Evidence has been found for both sputtering and ‘vaporization’ mechanisms for transfer of contaminants from implanter surfaces to the wafer target. The effectiveness of machine design choices and process procedures (such as wafer clamp design, post-implant chemical cleans, and the use of screen oxides) in minimizing the effects of contamination are discussed.

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References

  1. J.L. Forneris, G.B. Forney, R.A. Cavanaugh, G. Hrcbin, J.L. Blouse, in Ion Implantation: Equipment and Techniques, eds. H. Ryssel and H. Glawischnig, Springer (1983) pp. 407–425.

  2. K.G. Barraclough, P.J. Ward, in Defects in Silicon, eds. W.M. Bullis and L.C. Kimerling, Electrochem. Soc. Proc. 83-9 (1983) pp. 388–395.

  3. K.D. Beyer and T.H. Yeh, J. Electrochem. Soc. 129 (1982) 2527–2530.

    Article  CAS  Google Scholar 

  4. E.W. Haas, H. Glawischnig, G. Lichti, A. Beier, J. Electronic Materials 7 (1978) 525–533.

    Article  CAS  Google Scholar 

  5. P.L.F. Hemment, Vacuum 29 (1979) 439–442.

    Article  CAS  Google Scholar 

  6. B.J. Masters, IEEE Trans. Nuclear Sci. NS-20 (1973) 1032–1034.

    Article  Google Scholar 

  7. K. Shimizu and H. Kawakatsu, in Surface Contamination, Vol. 1, ed. K.L. Mittal, Plenum (1979) pp. 113–127.

  8. M.Y. Tsai, B.G. Streetman, R.J. Blattner, C.A. Evans, J. Electrochem. Soc. 126 (1979) 98–102.

    Article  CAS  Google Scholar 

  9. G. Ryding, in Ion Implantation Techniques, eds. H. Ryssel and H. Glawischnig, Springer (1982) pp. 319–342.

  10. M.I. Currrent, Bull. American Phys. Soc. 28-9 (1983) 1332.

    Google Scholar 

  11. K. Honda, A. Ohsawa, N. Toyokura, Appl. Phys. Lett. 45 (1984) 270–271.

    Article  CAS  Google Scholar 

  12. R.B. Fair and W. G. Meyer, in Silicon Processing, ed. D.G. Gupta, ASTM STP 804 (1983) pp. 290–305.

  13. L.A. Larson, in Advanced Applications of Ion Implantation, eds. D.K. Sadana and M.I. Current, SPIE Proc. 530 (1985).

  14. P.J. Ward, J. Electrochem. Soc. 129 (1982) 2573–2576.

    Article  CAS  Google Scholar 

  15. P.S.D. Lin, R.B. Marcus, T.T. Sheng, J. Electrochem. Soc. 130 (1983) 1878–1883.

    Article  CAS  Google Scholar 

  16. A.M. Goodman, L.A. Goodman, H.F. Gossenberger, RCA Review 44 (1983) 326–341.

    CAS  Google Scholar 

  17. P.F. Schmidt, J. Electrochem. Soc. 130 (1983) 196–199.

    Article  CAS  Google Scholar 

  18. S.P. Muraka, C.J. Mogab. J. Electronic Materials 8 (1979) 763–779.

    Article  Google Scholar 

  19. T.M. Buck and R.L. Meek, in Silicon Device Processing, ed. C.P. Marsden, NBS Spec. Pub 337 (1970) 419–430.

  20. F.B. Koch, R.L. Meek, D.V. McCaughan, J. Electrochem. Soc. 121 (1974) 558–562.

    Article  CAS  Google Scholar 

  21. P. Ziemann, K. Kohler, J.W. Coburn, E. Kay, J. Vac. Sci. Technol. B1 (1983) 31–34.

    Article  Google Scholar 

  22. L.M. Eprath and R.S. Bennett, J. Electrochem. Soc. 129 (1982) 1822–1826.

    Article  Google Scholar 

  23. N. Natsuaki, M. Tamura, M. Miyao, T. Tokuyama, Japanese J. Appl. Phys. 16 (1977) Supplement 16-1, pp. 47–51.

    Article  Google Scholar 

  24. S. Mader and A.E. Michel, J. Vac. Sci. Technol. 13 (1976) 391–395.

    Article  CAS  Google Scholar 

  25. H.J. Geipel and R.B. Shasteen, IBM J. Res. Develop. 24 (1980) 362–369.

    Article  CAS  Google Scholar 

  26. H.J. Geipel and W.K. Tice, IBM J. Res. Develop. 24 (1980) 310–317.

    Article  CAS  Google Scholar 

  27. R.A. Moline and A.G. Cullis, Appl. Phys. Lett. 26 (1975) 551–553.

    Article  CAS  Google Scholar 

  28. D.K. Sadana, N.R. Wu, J. Washburn, M.I. Current, A. Morgan, D. Reed, M. Maenpaa, Nuc. Inst Methods 209/210 (1983) 743–750.

    Article  Google Scholar 

  29. N.R. Wu, P. Ling, D.K. Sadana, J. Washburn, M.I. Current, in Defects in Silicon, eds. W.M. Bullis and L.C. Kimerling, Electrochem. Soc. Proc. 83-9 (1983) pp. 366–372.

  30. P.L.F. Hemment, in Ion Implantation Techniques, eds. H. Ryssel and H. Glawischnig, Springer (1982) pp. 209–234.

  31. T. Ishitani, A. Shimase, H. Tamura, Appl. Phys. Lett. 39 (1981) 627–628.

    Article  CAS  Google Scholar 

  32. D.K. Sood and G. Dearnaley, in Applications of Ion Beams to Materials, 1975, eds. G. Carter, J.S. Colligon, W.A. Grant, Inst Phys. Conf. Ser. 28 (1976) pp. 196–203.

  33. J.C.C. Tsai and J.M. Morabito, Surf. Sci. 44 (1974) 247–252.

    Article  CAS  Google Scholar 

  34. H.H. Andersen and H.L. Bay, in Sputtering by Particle Bombardment: I, ed. R. Behrisch, Springer (1981) pp. 145–218.

  35. P. Sigmund, Phys. Rev. 184 (1969) 383–416 and 187 (1969) 768.

    Article  CAS  Google Scholar 

  36. SUPREMIII-A Program for Integrated Circuit Process Modeling and Simulation, C.P. Ho, S.E. Hansen, P.M. Fahey, Integrated Circuits Laboratory Tech. Rep. SEL84-001, Stanford University (1984).

  37. C. McHenry, Xerox/El Segundo, CA, private communication.

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Authors and Affiliations

  1. National Semiconductor Corp., 2900 Semiconductor Drive, Santa Clara, CA, 95051, USA

    L. A. Larson

  2. Xerox-Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, 94304, USA

    M. I. Current

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  1. L. A. Larson
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  2. M. I. Current
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Larson, L.A., Current, M.I. Metallic Impurities and Dopant Cross-Contamination Effects in Ion Implanted Surfaces. MRS Online Proceedings Library 45, 381–388 (1985). https://doi.org/10.1557/PROC-45-381

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