Abstract
The first experimental mapping of the ion beam channels near the Si <001> axis is reported. Remarkably fine structure is observed, with over thirty microchannels identified within 20 degrees of the Si <001> axis. Each map is made from about 16000 channeling spectra with each channeling probability becoming a pixel of information in the final plot. Contour maps have been constructed for ions of He and N with energies from 50 to 2000 keV. All features are identified by theoretical plots of silicon planar channels and axial channels.
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Ziegler, J.F., Lever, R.F. The Channeling of Ions Near the Silicon <001> Axis. MRS Online Proceedings Library 45, 37 (1985). https://doi.org/10.1557/PROC-45-37
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DOI: https://doi.org/10.1557/PROC-45-37