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Characterization of Metal/AlxIn1−xN Interface Thermal Stability and Electrical Properties

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Abstract

The interfaces between metals and semiconductors are very crucial to the performance and reliability of solid-state devices. At the moment information on the interfaces between metals and group III-nitride semiconductors are very rare. In this study, linear I-V characteristics of titanium and aluminum to AlxIn1−xN of three different composition (x=0.18, 0.50,0.85) were obtained exhibiting ohmic characteristics. Specific contact resistance of these metals to A1.18In.82N and Al.5In.5N was measured by transmission line measurement. Interdiffusion between the metals and the semiconductors, induced by annealing in N2 ambient, was determined using RBS and thermal stability was evaluated.

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Authors and Affiliations

  1. Department of Electrical Engineering, University of Delaware, Newark, DE, 19716, USA

    Guohua Qiu, Fen Chen & J. O. Olowolafe

  2. Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716, USA

    C. P. Swann & K. M. Unruh

  3. Lake Shore Cysotronics, Inc., 64 East Walnut Street, Westerville, Ohio, 43081-2399, USA

    D. S. Holmes

Authors
  1. Guohua Qiu
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  2. Fen Chen
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  3. J. O. Olowolafe
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  4. C. P. Swann
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  5. K. M. Unruh
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  6. D. S. Holmes
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Qiu, G., Chen, F., Olowolafe, J.O. et al. Characterization of Metal/AlxIn1−xN Interface Thermal Stability and Electrical Properties. MRS Online Proceedings Library 449, 1073–1077 (1996). https://doi.org/10.1557/PROC-449-1073

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  • DOI: https://doi.org/10.1557/PROC-449-1073

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