Abstract
We have measured by the four-point probe or Van der Pauw technique the resistivity in vacuum from 77 K to 873 K or 1073 K of Ti34Si23N43 and Ti53N47. These films were reactively sputter-deposited on oxidized silicon wafers, with thickness ranging from 200 nm to 500 nm. The resistivity of the Ti34Si23N43 films decreases with temperature from 680 µΩcm at 80 K to about 570 µΩcm at 873 K. In contrast, resistivity of our Ti53N47 films rises with temperature, reaching a stable value of 62 µΩcm at above 673 K.
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Gottlieb, U., Sun, X., Kolawa, E. et al. Temperature Dependence of Resistivity for TiN and Ti-Si-N Films. MRS Online Proceedings Library 427, 361–364 (1996). https://doi.org/10.1557/PROC-427-361
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DOI: https://doi.org/10.1557/PROC-427-361