Abstract
The dark conductivity σ of poorly conducting In2O3-x films can be enhanced by orders of magnitude by blue or UV light exposure at any temperature between 4.2K and 300K. The resulting high σ state of amorphous films reverts back to its original low σ state upon heating to 400K in an inert gas and can be repeated many times. In crystalline films the high σ state is stable to higher temperatures where annealing leads to some outdiffusion of oxygen and hence to a conductivity increase which can only be reversed by external re-oxidation. The photoinduced increase in dark conductivity is accompanied by an increase in photoconductivity at hv = 0.6 or 2eV by a factor of 107 at 4.2K.
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Acknowledgments
We are most grateful to G. Kyriakidis and C. Xirouchaki of the Institute of Electronic Structure and Laser of the Foundation for Research and Technology-Hellas, Heraklion, Greece for sending us the crystalline In203_x sample. The research was supported by the NSF grant NSF DMR 9408670 and by the general facilities of MRSEC of the University of Chicago supported by NSF.
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Stradins, P., Fritzsche, H. & Claflin, B. Photoinduced Reversible Conductivity and Photoconductivity Changes in Transparent Amorphous and Micro-Crystalline In2O3-x FILMS. MRS Online Proceedings Library 426, 455–460 (1996). https://doi.org/10.1557/PROC-426-455
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DOI: https://doi.org/10.1557/PROC-426-455