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SiC Semiconductor Applications - An Air Force Perspective

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Abstract

The Department of Defense (DoD) is investing in the development of Silicon Carbide (SiC) for a wide range of applications. Over the past year, SiC technology has demonstrated excellent device performance results for power devices, high temperature electronic devices and microwave devices. The materials growth and processing technology for SiC is now at a level of sufficient maturity to support substantial device development efforts. While there is still considerable materials and device research required for SiC to achieve it’s full potential, the fundamental technology has been proven for several critical applications. A perspective on some Air Force device performance requirements will be presented. The status of SiC materials development, material limits to advances in device performance and issues relating to supporting technology will also be discussed.

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References

  1. K. C. Reinhardt, J. D. Scofield and W.C. Mitchel, in Proceedings from the Workshop on High Temperature Electronics for Vehicles, edited by G. Khalil, H. Singh and T. Podlesak (Army Research Laboratory Technical Report, April, 1995) pp. 73–79.

  2. Κ. C. Reinhardt, private communication.

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  5. J. King, private communication.

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Acknowledgments

The author gratefully acknowledges the advice, guidance and technical contributions of John King, Bill Mitchel, Steve Przybylko and Kitt Reinhardt from the Air Force Wright Laboratory supporting the preparation of this manuscript, and the patience and guidance of Kurt Gaskill of the Naval Research Laboratory in the final preparation of this paper.

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Authors and Affiliations

  1. U.S. Air Force Wright Laboratory Materials Directorate, 3005 Ρ St. Ste. 6, Ohio, WPAFB, 45433-7707, USA

    L.S. Rea

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  1. L.S. Rea
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Correspondence to L.S. Rea.

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Rea, L. SiC Semiconductor Applications - An Air Force Perspective. MRS Online Proceedings Library 423, 3–7 (1996). https://doi.org/10.1557/PROC-423-3

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  • DOI: https://doi.org/10.1557/PROC-423-3

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