Skip to main content
SpringerLink
Log in

High Resolution Z-Contrast Imaging and Lattice Location Analysis of Dopants in Ion-Implanted Silicon

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Two new electron microscopy techniques have been developed which greatly extend the capabilities for the micro-characterization of semiconductors. The first is a technique for the direct imaging of dopants in semiconductors, whether or not they are in solution, using Z-contrast, and the second is a technique for determining the substitutional fraction of dopant. Both techniques are capable of nanometer spatial resolution and allow the detailed study of dopant segregation, precipitation, and clustering effects.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. M. J. Treacy, J. Microsc. Spectrosc. Electr. 7, 511 (1982).

    CAS  Google Scholar 

  2. S. J. Pennycook and D. McMullan, Ultramicroscopy 11, 315 (1983).

    Article  Google Scholar 

  3. S. J. Pennycook and J. Narayan, Appl. Phys. Lett. 45, 385 (1984).

    Article  CAS  Google Scholar 

  4. E. Fogarassy, in Materials Research Society Proceedings, Symposium A (to be published, 1985).

  5. S. J. Pennycook, J. Narayan, and O. W. Holland, Appl. Phys. Lett. 44, 547 (1984).

    Article  CAS  Google Scholar 

  6. J. C. H. Spence and J. Tafto, J. Microscopy 130, 147 (1983).

    Article  CAS  Google Scholar 

  7. S. J. Pennycook, J. Narayan, and O. W. Holland, p. 97 in Electron Microscopy of Materials, Mat. Res. Soc. Symp. Proc. Vol. 31, ed. by W. Krakow, Elsevier-North Holland, NY (1984).

    Google Scholar 

  8. S. J. Pennycook, J. Narayan, and O. W. Holland, p. 126 in Proc. 41st Annual EMSA Meeting, San Francisco Press, Inc. (1983).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA

    S. J. Pennycook, J. Narayan, R. J. Cijlbertson & E. Fogarassy

  2. IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA

    P. E. Batson

Authors
  1. S. J. Pennycook
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. J. Narayan
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. R. J. Cijlbertson
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. E. Fogarassy
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. P. E. Batson
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-AC05-840R21400 with Martin Marietta Energy Systems, Inc.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Pennycook, S.J., Narayan, J., Cijlbertson, R.J. et al. High Resolution Z-Contrast Imaging and Lattice Location Analysis of Dopants in Ion-Implanted Silicon. MRS Online Proceedings Library 41, 287–294 (1984). https://doi.org/10.1557/PROC-41-287

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-41-287

Search

Navigation